The subthreshold swing refers to the change in the gate-to-source voltage required to change the drain current by an order of magnitude.

Insulated gate field effect transistors having high subthreshold swing values have large leakage currents and consume relatively large

amounts of standby power. Insulated gate field effect transistors having low subthreshold swing values, on the other hand,

have low leakage currents, consume less power, and are more ideally suited for low power applications.

??

The subthreshold swing is determined by the charge in the channel region.

It is a parameter commonly used to characterize the performance of insulated gate field effect transistors in the subthreshold region.

erm, i'm not engineer, but it sounds like a measure of how much flux is needed to affect a change in the drain current.

ok thanks, that helps

not an*. so the higher the swing value, the more flux is needed, hence, more power wastage. like, more strength needs to be exerted?

just needed to "crowdsource" the research

what's crowdsource?

fatten up your research paper?

i thought you were asking what it means! hahahah

crowdsourcing is a term for "outsourcing" work to the crowd

ooh there's a wiki article on "crowdsourcing"!

care to share it?

linkielinkie

i got the subthreshold swing info here. it's really looong >.< *whoosh*

fwah, patent search sia

it was the only google search result that gave me what i wanted the other results merely used the term casually

ahh ok thanks!